Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states-Reference-Cited by-同舟云学术

Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states

Published:2017 Issue:27 Volume:9 Page:9386-9395
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Nakamura Hisao¹²³⁴^ORCID,Rungger Ivan⁵⁶⁷,Sanvito Stefano⁸⁹¹⁰¹¹¹²,Inoue Nobuki¹²³⁴,Tominaga Junji¹³²³⁴,Asai Yoshihiro¹²³⁴

Affiliation:

1. CD-FMat

2. National Institute of Advanced Industrial Science and Technology (AIST)

3. Tsukuba

4. Japan

5. National Physical Laboratory

6. Teddington

7. UK

8. School of Physics

9. AMBER and CRANN Institute

10. Trinity College

11. Dublin 2

12. Ireland

13. NeRI

Abstract

A theoretical study of an interfacial phase change memory made of a GeTe–Sb₂Te₃ superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism.

Funder

Japan Science and Technology Agency

Science Foundation Ireland

Cordis

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR03495D

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