Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3155202
Reference11 articles.
1. Nanoscale thermal transport
2. Modeling of Programming and Read Performance in Phase-Change Memories—Part II: Program Disturb and Mixed-Scaling Approach
3. Separate domain formation in Ge2Sb2Te5–SiOx mixed layer
4. Thermal conductivity of phase-change material Ge2Sb2Te5
5. Fullerene thermal insulation for phase change memory
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4. Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device;ACS Applied Materials & Interfaces;2022-09-23
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