Charging and discharging properties of electron traps created by hot‐carrier injections in gate oxide ofn‐channel metal oxide semiconductor field effect transistor-Reference-Cited by-同舟云学术

Charging and discharging properties of electron traps created by hot‐carrier injections in gate oxide ofn‐channel metal oxide semiconductor field effect transistor

Published:1993-03 Issue:5 Volume:73 Page:2559-2563
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vuillaume Dominique,Bravaix Alain

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.353065

Reference19 articles.

1. The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

2. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

3. Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation

4. Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors

5. The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

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3. Recovery after hot-carrier injection: Slow versus fast traps;Microelectronics Reliability;2019-09

4. Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO 2;Electronics Letters;2015-10

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