Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO 2
Author:
Affiliation:
1. Electrical Engineering DepartmentThe University of Texas ArlingtonArlingtonTX76019USA
2. Texas Instruments Inc.13532 N. Central ExpwyDallasTX75243USA
Funder
Semiconductor Research Corporation
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2074
Reference10 articles.
1. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
2. Positive and negative oxygen vacancies in amorphous silica;Kimmel A.V.;ECST,2009
3. Oxygen vacancies in amorphous silica: structure and distribution of properties
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