Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs-Reference-Cited by-同舟云学术

Simulation-based study of single-event burnout in 4H-SiC high-voltage vertical superjunction DMOSFET: Physical failure mechanism and robustness vs performance tradeoffs

Published:2022-01-24 Issue:4 Volume:120 Page:043501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McPherson Joseph A.¹^ORCID,Woodworth Andrew A.²,Paul Chow T.³,Ji Wei¹^ORCID

Affiliation:

1. Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

2. NASA Glenn Research Center, Cleveland, Ohio 44135, USA

3. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

Funder

NASA Headquarters

U.S. Nuclear Regulatory Commission

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0076740

Reference25 articles.

1. Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout

2. Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

3. Single-Event Burnout Mechanisms in SiC Power MOSFETs

4. Single-event burnout of Super-junction power MOSFETs

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