Effect of reconstruction of a semiconductor surface on the crystal growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88006
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4. Correlation of electronic surface properties and surface structure on cleaved silicon surfaces
5. Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors
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1. Surface Reconstruction Processes in the Scope of the BCF Theory of Crystal Growth;Heterostructure Epitaxy and Devices — HEAD’97;1998
2. Simple Analysis of Atomic Forces Acting on Silicon Surfaces;physica status solidi (b);1989-11-01
3. The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE;Crystal Research and Technology;1989-05
4. The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions;Progress in Crystal Growth and Characterization;1989-01
5. Role of Adsorption Layer in Chemical Vapor Deposition;Growth of Crystals;1986
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