Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655818
Reference27 articles.
1. Epitaxial Growth of Silicon and Germanium (I)
2. The growth of crystals and the equilibrium structure of their surfaces
3. The influence of dislocations on crystal growth
4. Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporation
5. Growth of epitaxial silicon layers by vacuum evaporation
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