Distribution of Ge in O+implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107987
Reference20 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiO2Layer Formed by Oxygen-Ion Implantation
3. Nonplanar and noncontinuous buried layers of SiO2 in silicon formed by ion beam synthesis
4. Behavior of high dose O+‐implanted Si/Ge/Si structures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ge-Related Interfacial Defects In SiGe Alloy Structures;MRS Proceedings;1995
2. Ge-Related Interfacial Defects in Sige Alloy Structures;MRS Proceedings;1995
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