Properties of molecular‐beam‐epitaxy‐grown and O+‐implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor-Reference-Cited by-同舟云学术

Properties of molecular‐beam‐epitaxy‐grown and O+‐implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor

Published:1988-07-15 Issue:2 Volume:64 Page:926-930
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ota Y.,Yanagihara M.,Inada M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.341895

Reference13 articles.

1. Heterostructure bipolar transistors and integrated circuits

2. Extremely Low Resistance Ohmic Contacts to n-GaAs for AlGaAs/GaAs Heterojunction Bipolar Transistors

3. Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layer

4. Emitter—Base—Collector self-aligned heterojunction bipolar transistors using wet etching process

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1. Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation;Applied Physics Letters;2016-03-28

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3. High fmax AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier;Solid-State Electronics;1997-10

4. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30

5. Defects and ion redistribution in implant‐isolated GaAs‐based device structures;Journal of Applied Physics;1993-12