Structured back gates for high-mobility two-dimensional electron systems using oxygen ion implantation
Author:
Affiliation:
1. Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
2. Lehrstuhl für Experimentalphysik IV, Universität Augsburg, 86159 Augsburg, Germany
Funder
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (SNF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945090
Reference16 articles.
1. Independently contacted two‐dimensional electron systems in double quantum wells
2. Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
3. Effect of the proximity of an ex situ patterned interface on the quality of two-dimensional electron gases at GaAs/AlGaAs heterojunctions
4. Fabrication of independently contacted and tuneable 2D-electron-hole systems in GaAs/AlGaAs double quantum wells
5. Critical tunneling currents in the regime of bilayer excitons
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