Relation between the suppression of the generation of stacking faults and the mechanism of silicon oxidation during annealing under argon containing oxygen-Reference-Cited by-同舟云学术

Relation between the suppression of the generation of stacking faults and the mechanism of silicon oxidation during annealing under argon containing oxygen

Published:2000-07-15 Issue:2 Volume:88 Page:1141-1148
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Suzuki Toshiharu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373789

Reference27 articles.

1. Fundamental limitations in microelectronics—I. MOS technology

2. Effect of oxidation‐induced stacking faults on dielectric breakdown characteristics of thermal silicon dioxide

3. Surface‐ and inner‐microdefects in annealed silicon wafer containing oxygen

4. Ring‐shaped stacking faults induced by oxide precipitates in silicon

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