Suppression of oxidation-induced stacking fault generation in argon ambient annealing with controlled oxygen and the effect upon bulk defects-Reference-Cited by-同舟云学术

Suppression of oxidation-induced stacking fault generation in argon ambient annealing with controlled oxygen and the effect upon bulk defects

Published:2002-02 Issue:1 Volume:5 Page:5-10
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Suzuki Toshiharu

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Surface‐ and inner‐microdefects in annealed silicon wafer containing oxygen

5. Ring‐shaped stacking faults induced by oxide precipitates in silicon

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