Junction characteristics of Al‐Al2O3‐CdS diodes fabricated by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90817
Reference4 articles.
1. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
2. Molecular beam epitaxy
3. Some studies of thin film diodes utilizing cadmium sulphide and sulphur
4. Some investigations on evaporated AuCdS-type metal-semiconductor barriers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis and crystal structure of a novel layered Zintl phase: potassium gallium arsenide (K3Ga3As4);Inorganic Chemistry;1990-09
2. Effects of Indium on the Properties of N-Type CdS Thin Films Deposited by Spray Pyrolysis;MRS Proceedings;1986
3. Molecular beam epitaxy: An emerging epitaxy technology;Thin Solid Films;1981-09
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