Some investigations on evaporated AuCdS-type metal-semiconductor barriers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Evaporated Metallic Contacts to Conducting Cadmium Sulfide Single Crystals
2. Metal-semiconductor surface barriers
3. Some computed and measured characteristics of CdS space-charge-limited diodes
4. D.J. Page, Westinghouse Res. Lab. Paper No. 9
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1. The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures;Current Applied Physics;2013-09
2. Electrical properties of Mo-cadmium chalcogenide Schottky barrier diodes;Physica Status Solidi (a);1983-02-16
3. Junction characteristics of Al‐Al2O3‐CdS diodes fabricated by molecular beam epitaxy;Applied Physics Letters;1979-03-15
4. Rectification properties of CdS Schottky barrier diodes with evaporated Au/Ti as blocking contact;Physica Status Solidi (a);1977-08-16
5. Correlation between open-circuit voltage and interface parameters at the AuCdS illuminated contact;Physica Status Solidi (a);1976-02-16
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