Molecular beam epitaxy: An emerging epitaxy technology
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference98 articles.
1. Molecular beam epitaxial GaAs layers for MESFET’s
2. Low-noise microwave f.e.t.s fabricated by molecular-beam epitaxy
3. Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
4. GaAs MESFET prepared by molecular beam epitaxy (MBE)
5. Low‐noise and high‐power GaAs microwave field‐effect transistors prepared by molecular beam epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RHEED studies on Z-cut LiNbO3;Electronics Letters;1986
2. Effects of thermal annealing on Si‐doped GaAs grown by molecular beam epitaxy;Journal of Applied Physics;1985-05-15
3. Tungsten patterning as a technique for selective area III–V MBE growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1985-03
4. Substrate preparation for thin film deposition—a survey;Thin Solid Films;1985-02
5. Growth from the Vapor Phase;Springer Series in Solid-State Sciences;1984
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