Hole transport in strained Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363905
Reference12 articles.
1. Hole transport theory in pseudomorphicSi1−xGexalloys grown on Si(001) substrates
2. The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1
3. Monte Carlo simulation of hole transport in strained Si1 − xGex
4. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
5. Low‐field hole mobility of strained Si on (100) Si1−xGexsubstrate
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1. On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects;Journal of Computational Electronics;2014-01-03
2. Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature;IEEE Transactions on Electron Devices;2012-07
3. Ak·panalytical model for valence band of biaxial strained Ge on (001) Si1−xGex;Chinese Physics B;2012-05
4. Valence band structure and hole effective mass of uniaxial stressed Germanium;Journal of Computational Electronics;2011-10-13
5. Impact of [110]/(001) uniaxial stress on valence band structure and hole effective mass of silicon;Journal of Semiconductors;2011-02
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