Monte Carlo simulation of hole transport in strained Si1 − xGex
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
2. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1−xGexheterostructures
3. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
4. Physics and applications of GexSi1-x/Si strained-layer heterostructures
5. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
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