Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2037871
Reference25 articles.
1. Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source
2. Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique
3. Electrical properties of photo-CVD boron-doped hydrogenated nanocrystalline silicon-carbide (p-nc-SiC:H) films for uncooled IR bolometer applications
4. Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique
5. Improvement ofpin-type amorphous silicon solar cell performance by employing double silicon-carbidep -layer structure
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