Improvement ofpin-type amorphous silicon solar cell performance by employing double silicon-carbidep -layer structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1639140
Reference21 articles.
1. A novel structure, high conversion efficiency p‐SiC/graded p‐SiC/i‐Si/n‐Si/metal substrate‐type amorphous silicon solar cell
2. Amorphous siliconp‐i‐nsolar cells with graded interface
3. Use of a carbon‐alloyed graded‐band‐gap layer at thep/iinterface to improve the photocharacteristics of amorphous silicon alloyedp‐i‐nsolar cells prepared by photochemical vapor deposition
4. Light-induced degradation in amorphous silicon p-i-n solar cells prepared by photo-CVD
5. Etching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method
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