Etching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119418
Reference7 articles.
1. High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
2. Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon
3. Optical dispersion relations for amorphous semiconductors and amorphous dielectrics
4. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry
5. Real time spectroscopic ellipsometry study of hydrogenated amorphous silicon p‐i‐n solar cells: Characterization of microstructural evolution and optical gaps
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