Affiliation:
1. School of Electronics Engineering, Kyungpook National University, 80 Dae hakro, Bukgu, Daegu, 702-701, South Korea
Abstract
This article shows the characteristics on a - SiGe:H based solar cells with various structures. Based on these results, we proposed the a - SiC:H / a - SiGe:H hetero-junction thin film solar cells with a - Si:H buffer layer at the p/i interface to improve the performance of pin-type a - SiGe:H based solar cell. All films of amorphous materials were deposited by 13.56 MHz PECVD method. The effects of deposited parameters on the characteristics of a - SiC:H and a - SiGe:H films have been investigated by ultraviolet–visible–near infrared (UV–VIS–NIR) spectrophotometer. The various values of V oc , J sc , FF and η were measured under 100 mW/cm2 (AM 1.5) solar simulator irradiation. In the proposed structure, we achieved a higher conversion efficiency than general a - SiGe:H solar cell and a - SiC:H / a - SiGe:H hetero-junction thin film solar cells without a - Si:H buffer layer at the p/i interface. Based on results obtained from this study, we discuss the roles of a - Si:H buffer layer in a - SiC:H / a - SiGe:H hetero-junction thin film solar cells.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Cited by
1 articles.
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