Observation and modeling of random telegraph signals in the gate and drain currents of tunneling metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1360779
Reference10 articles.
1. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
2. A physical model for random telegraph signal currents in semiconductor devices
3. Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs
4. 1/fand random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
5. Random telegraph signals and low-frequency noise in n-metal–oxide–semiconductor field-effect transistors with ultranarrow channels
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1. RTN and Its Intrinsic Interaction with Statistical Variability Sources in Advanced Nano-Scale Devices: A Simulation Study;Noise in Nanoscale Semiconductor Devices;2020
2. Principles and Applications of Ig-RTN in Nano-scaled MOSFET;Noise in Nanoscale Semiconductor Devices;2020
3. Sub-15nm gate-all-around field effect transistors on vertical silicon nanowires;Solid-State Electronics;2017-04
4. Randon telegraph signal phenomenology;Random Telegraph Signals in Semiconductor Devices;2017
5. The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement;Applied Physics Letters;2015-12-14
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