Author:
Larrieu G.,Guerfi Y.,Han X.L.,Clément N.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Multigate transistors as the future of classical metal oxide semiconductor field-effect transistors;Ferain;Nature,2011
2. The ultimate CMOS device and beyond;Kuhn,2012
3. Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies;Bao,2014
4. Vertical nanowire array-based field effect transistors for ultimate scaling;Larrieu;Nanoscale,2013
5. Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array;Larrieu,2015
Cited by
31 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献