Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si-Reference-Cited by-同舟云学术

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Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

Published:2018-10-15 Issue:16 Volume:113 Page:161101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Srinivasan S. A.¹²³^ORCID,Porret C.¹^ORCID,Pantouvaki M.¹,Shimura Y.¹,Geiregat P.²³⁴,Loo R.¹^ORCID,Van Campenhout J.¹^ORCID,Van Thourhout D.¹²³

Affiliation:

1. imec, Kapeldreef 75, Heverlee 3001, Belgium

2. Photonics Research Group, Department of Information Technology, Ghent University-imec, Technologiepark-Zwijnaarde 16 iGent, Ghent 9052, Belgium

3. Center for Nano- and Biophotonics, Ghent University, Technologiepark-Zwijnaarde 16 iGent, Ghent 9052, Belgium

4. Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5040153

Reference27 articles.

1. −1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

2. 56 Gb/s Germanium Waveguide Electro-Absorption Modulator

3. Fabrication-Tolerant Four-Channel Wavelength-Division-Multiplexing Filter Based on Collectively Tuned Si Microrings

4. Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides

5. Active Components for 50 Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform

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1. Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals;Journal of Physics D: Applied Physics;2021-11-12

2. Light Emission from Germanium Nanostructures;Topics in Applied Physics;2021

3. Reliability of lasers on silicon substrates for silicon photonics;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021

4. Layer-exchange crystallization for low-temperature (∼450 °C) formation of n-type tensile-strained Ge on insulator;Applied Physics Letters;2020-10-26

5. Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon;Semiconductors;2020-06-30

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