−1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond-Reference-Cited by-同舟云学术

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−1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

Published:2016-02-24 Issue:5 Volume:24 Page:4622
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Chen H.,Verheyen P.,De Heyn P.,Lepage G.,De Coster J.,Balakrishnan S.,Absil P.,Yao W.,Shen L.,Roelkens G.,Van Campenhout J.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference14 articles.

1. 31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate

2. 42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

3. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

4. 36 GHz submicron silicon waveguide germanium photodetector

5. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current

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4. Waveguide-integrated twisted bilayer graphene photodetectors;Nature Communications;2024-05-01

5. Waveguide-coupled germanium lateral uni-traveling-carrier photodetector for coherent applications at 130 Gbaud and beyond;Silicon Photonics XIX;2024-03-12

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