Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346133
Reference17 articles.
1. Raman study of an epitaxial GaAs layer on a Si [100] substrate
2. Optical determination of strains in heterostructures: GaAs/Si as an example
3. Heterogeneous Strain Relaxation in GaAs on Si (100)
4. Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux
5. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Can Silver Be Alloyed with Bismuth on Nanoscale? An Optical and Structural Approach;The Journal of Physical Chemistry C;2016-12-30
2. Theoretical Model and Experimental Study of Effects of Rapid Thermal Annealing on Self-assembled In(Ga)As/GaAs Quantum Dots;Silicon;2015-10-31
3. Lineshape analysis of Raman scattering from LO and SO phonons in III-V nanowires;Journal of Applied Physics;2009-12
4. Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy;physica status solidi (b);2006-06
5. Microcharacterization of Conformal GaAs on Si Layers by Spatially Resolved Optical Techniques;Nanoscale Spectroscopy and Its Applications to Semiconductor Research;2002
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3