Heterogeneous Strain Relaxation in GaAs on Si (100)

Author:

Freundlich A.,Neu G.,Leycuras A.,Carles R.,Verie C.

Abstract

AbstractResidual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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