Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2938052
Reference28 articles.
1. M. Ritala and M. Leskela, inHandbook of Thin Film Materials, edited by H. S. Nalwa (Academic, San Diego, 2002), Vol. 1, pp. 103–159.
2. Island growth as a growth mode in atomic layer deposition: A phenomenological model
3. Analysis of a transient region during the initial stage of atomic layer deposition
4. Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
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