Highly strained InGaAs∕GaAs multiple quantum-wells for laser applications in the 1200–1300 nm wavelength regime
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2010615
Reference17 articles.
1. Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications
2. 1.3μm InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation
3. Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells
4. GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
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