Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells
2. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
3. Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser
4. Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers
5. 1.17-μm highly strained GaInAs-GaAs quantum-well laser
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1. MOCVD growth and thermal stability analysis of 1.2 µm InGaAs/GaAs multi quantum well structure;Journal of Alloys and Compounds;2022-11
2. Strained-layer quantum well materials grown by MOCVD for diode laser application;Progress in Quantum Electronics;2021-01
3. Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property;Superlattices and Microstructures;2018-02
4. Quantum-Well Lasers and Their Applications;Reference Module in Materials Science and Materials Engineering;2016
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