Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366352
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07
2. Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures;Journal of Crystal Growth;2004-02
3. Vapor growth of Hg1−xCdxI2 on glass using CdTe buffer;Thin Solid Films;2001-01
4. Vapor phase epitaxy of Hg1−xCdxI2 on sapphire;Journal of Crystal Growth;1998-08
5. Hg1−xCdxI2/CdTe heterostructures for nuclear radiation detectors: Effect of epitaxial growth on substrate properties;Applied Physics Letters;1998-04-20
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