Hg1−xCdxI2/CdTe heterostructures for nuclear radiation detectors: Effect of epitaxial growth on substrate properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121253
Reference13 articles.
1. Crystal growth and applications of mercuric iodide
2. Recent advances in bulk crystal growth from the vapour: the case of α-HgI2
3. Undoped high‐resistivity cadmium telluride for nuclear radiation detectors
4. High quality CdTe and its application to radiation detectors
5. Vapor phase epitaxy of Hg1−xCdxI2 layers on CdTe substrates
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1. Effect of source composition on the vapor phase epitaxy of Cd1−xZnxTe large-area layers;Journal of Crystal Growth;2008-04
2. EBL Bi-layer resist scheme for CdTe/Si submicron structures for lift-off processing;Microelectronic Engineering;2007-05
3. Vapour growth of Cd(Zn)Te columnar nanopixels into porous alumina;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-11
4. Hg1−xCdxI2/CdTe-based heterostructures as a new high Z material for radiation detectors: VPE growth of micro-pixel arrays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07
5. Formation of CdTe columnar structures prompted by In- and Ga-rich nanodots;Journal of Crystal Growth;2005-02
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