Charge Phenomena in dc Reactively Sputtered SiO2 Films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1656025
Reference19 articles.
1. Ion Transport Phenomena in Insulating Films
2. An investigation of instability and charge motion in metal-silicon oxide-silicon structures
3. Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers
4. Dielectric Thin Films through rf Sputtering
5. Limitations of the MOS capacitance method for the determination of semiconductor surface properties
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1. Characterization of sputtered yttria‐stabilized zirconia thin film and its application to a metal‐insulator‐semiconductor structure;Journal of Applied Physics;1992-03
2. Effect of N2Ar mixing on the reactive sputtering characteristics of silicon;Thin Solid Films;1983-03
3. Device quality MOS Gate insulators: Sputter deposition and low temperature processing;IEEE Electron Device Letters;1982-10
4. MOS device fabrication using sputter-deposited gate oxide and polycrystalline silicon layers;Solid-State Electronics;1980-08
5. The negative role of the fast electrons in the microwave oxidation of silicon;Czechoslovak Journal of Physics;1978-06
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