An investigation of instability and charge motion in metal-silicon oxide-silicon structures-Reference-Cited by-同舟云学术

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An investigation of instability and charge motion in metal-silicon oxide-silicon structures

Published:1966-02 Issue:2 Volume:ED-13 Page:222-237
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hofstein S.R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31618/01474264.pdf?arnumber=1474264

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