Metallization contacts to nonpolar a-plane n-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2963492
Reference14 articles.
1. Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN
2. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
3. Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells
4. Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride
5. Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
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