Probing the intermixing in In(Ga)As∕GaAs self-assembled quantum dots by Raman scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2172174
Reference23 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
3. Ga/In-intermixing and segregation during InAs quantum dot formation
4. Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots
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1. Subsiding strain-induced In-Ga intermixing in InAs/In Ga1−As sub-monolayer quantum dots for room temperature photodetectors;Infrared Physics & Technology;2022-03
2. The role and growth of strain – reducing layer by molecular -beam epitaxy in a multi – stack InAs/(In,Ga)As sub - monolayer quantum dot heterostructure;Optical Materials;2021-04
3. Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers;Nanophotonics VIII;2020-04-01
4. Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures;Nanophotonics VIII;2020-04-01
5. Self-assembled InAs/InGaAsP/InP quantum dots: Intraband relaxation impacted by ultrathin GaP sublayer;Journal of Applied Physics;2020-03-31
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