Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2123383
Reference24 articles.
1. Electronic Properties of Ga(In)NAs Alloys
2. Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes
3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
4. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
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1. High characteristic temperature 1.5 µm wavelength laser diode via Sb-based quantum dots in quantum wells;Journal of Modern Optics;2018-12-21
2. Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow;Applied Physics Express;2010-12-16
3. Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth;Applied Physics Letters;2009-12-28
4. Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications;IET Optoelectronics;2009-12-01
5. The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells;Journal of Crystal Growth;2009-03
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