Low‐temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110957
Reference11 articles.
1. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
2. Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing
3. Low‐temperature homoepitaxial film growth of Si by reactive ion beam deposition
4. Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane
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3. Effects of direct-current bias on the carbonization of Si(100) at low temperatures using electron cyclotron resonance chemical vapor deposition;Thin Solid Films;2003-07
4. Comparison of two surface preparations used in the homoepitaxial growth of silicon films by plasma enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
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