Effects of direct-current bias on the carbonization of Si(100) at low temperatures using electron cyclotron resonance chemical vapor deposition-Reference-Cited by-同舟云学术

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Effects of direct-current bias on the carbonization of Si(100) at low temperatures using electron cyclotron resonance chemical vapor deposition

Published:2003-07 Issue:1-2 Volume:435 Page:340-343
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hwack Pyo Jae,Whang Ki-Woong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy

2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

3. Synthesis of diamond using a low pressure, radio frequency, inductively coupled plasma

4. Microcrystalline SiC Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperatures

5. Effect of SiH4/CH4 flow ratio on the growth of β‐SiC on Si by electron cyclotron resonance chemical vapor deposition at 500 °C

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process;Materials Science Forum;2005-05

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