Carrier localization and the origin of luminescence in cubic InGaN alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405003
Reference19 articles.
1. Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2. Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering
3. Effects of alloy potential fluctuations in InGaN epitaxial films
4. Persistent photoconductivity in InGaN/GaN multiquantum wells
5. Effect of disorder on the optical spectra of wide-gap II–VI semiconductor solid solutions
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1. Temperature-Dependent Cascades in Irradiated In x Ga1-x N (x < 0.34) Materials;IEEE Transactions on Nuclear Science;2023-11
2. Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation;Physical Review Applied;2023-10-26
3. Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination;Physical Review B;2022-05-12
4. Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different In Gradients;Crystals;2021-11-15
5. Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis;Physical Review B;2021-04-19
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