Growth mechanism of cavities in MeV helium implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1469207
Reference17 articles.
1. Impurity gettering effects in separation-by-implanted-oxygen (SIMOX) wafers: what getters what, where and how
2. Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation
3. Microstructures of Si Surface Layers Implanted with Cu
4. Binding of Copper to Nanocavities in Silicon
5. Chemical and electrical properties of cavities in silicon and germanium
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1. Molecular dynamics simulation of helium ion implantation into silicon and its migration;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-10
2. Influence of helium on the nucleation and growth of bubbles in silicon: a multiscale modelling study;Journal of Physics D: Applied Physics;2019-08-23
3. Defects induced by MeV H+ implantation for exfoliating of free-standing GaN film;Applied Physics A;2018-01-11
4. Damage induced by helium ion irradiation in Fe-based metallic glass;Journal of Nuclear Materials;2017-07
5. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10
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