Microstructures of Si Surface Layers Implanted with Cu

Abstract

ABSTRACTThe microstructures of Si ion-implanted with Cu have been characterized by TEM after annealing. For 1.2 at.%, the Cu is trapped at planar defects, but for 10 at.%, η-Cu3Si forms, allowing Cu to diffuse at its equilibrium solubility. These observations allow proper evaluation of the binding energies of Cu to previously formed internal cavities (2.2 eV) and η-Cu3Si (1.7 eV). The η-Cu3Si in the 10 at.% layer catalyzes oxidation of the Si. The microstructures also indicate that Si implanted with ~2 at.% Cu reforms epitaxially with embedded defects after 8 hr. at 700°C, but for ~10 at.% Cu, epitaxy is not recovered after 6 hours at 600ºC.