DX centers in InxAl1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369687
Reference15 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Deep donor levels (DXcenters) in III‐V semiconductors
3. Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xas
4. Deep trap characterization in Si-doped In0.52Al0.48As/InP under hydrostatic pressure: a search for DX centres
5. Magneto-transport investigation of Si-Doped n+ Al0.48In0.52As: Observation of the dx centre
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1. A Universal Model for DX‐Center Binding Energy in Cubic III–V Compounds;physica status solidi (b);2021-01-29
2. Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells;Semiconductors;2019-03
3. Energy level of the Si-related DX-center in (AlyGa1−y)1−xInxAs;Applied Physics Letters;2015-03-09
4. DX centers in Si-doped InxAl1−xAs (0.3⩽x⩽0.5);Solid-State Electronics;2002-04
5. Heterojunction Transistors at Low Temperature;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001
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