Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3676270
Reference18 articles.
1. Current SiC technology for power electronic devices beyond Si
2. Silicon carbide and its use as a radiation detector material
3. Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors
4. Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering
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2. Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors;Applied Physics Letters;2021-08-09
3. Thick 4H-SiC epitaxial detectors for high-resolution radiation detection in harsh environment;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXII;2020-08-24
4. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices;Micromachines;2020-02-28
5. 4H-SiC epitaxial Schottky detectors: deep-level transient spectroscopy (DLTS) and pulse height spectroscopy (PHS) measurements;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI;2019-09-09
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