Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing-Reference-Cited by-同舟云学术

Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

Published:2019-02-04 Issue:5 Volume:114 Page:053510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gleason D. A.¹^ORCID,Galiano K.¹^ORCID,Brown J. L.²,Hilton A. M.²,Ringel S. A.³,Arehart A. R.³^ORCID,Heller E. R.⁴^ORCID,Dorsey D. L.⁴^ORCID,Pelz J. P.¹

Affiliation:

1. Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

2. KBRwyle, Dayton, Ohio 45431, USA

3. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

4. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA

Funder

Defense Associated Graduate Student Innovators

Office of Naval Research

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079745

Reference29 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. GaN: A Reliable Future in Power Conversion: Dramatic performance improvements at a lower cost

3. I. Rossetto , D. Bisi , C. de Santi , A. Stocco , G. Meneghesso , E. Zanoni , and M. Meneghini , in Power GaN Devices: Materials, Applications and Reliability, edited by M. Meneghini , G. Meneghesso , and E. Zanoni ( Springer International Publishing, Cham, 2017), pp. 197–236.

4. Deep traps in GaN-based structures as affecting the performance of GaN devices

5. Trapping effects and microwave power performance in AlGaN/GaN HEMTs

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