Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy-Reference-Cited by-同舟云学术

Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

Published:2015-12-07 Issue:23 Volume:107 Page:232905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guo X.¹,Pei D.¹,Zheng H.¹,King S. W.²,Lin Y.-H.³,Fung H.-S.³,Chen C.-C.³,Nishi Y.⁴,Shohet J. L.¹^ORCID

Affiliation:

1. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

2. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA

3. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

4. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

Funder

National Science Foundation (NSF)

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937582

Reference24 articles.

1. Robust Low-k Diffusion Barrier (k=3.5) for 45-nm Node Low-k (k=2.3)/Cu Integration

2. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

3. Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

4. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery;Applied Physics Letters;2017-05

2. Structure and energetics of SiOC and SiOC ‐modified carbon‐bonded carbon fiber composites;Journal of the American Ceramic Society;2017-04-21

3. Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-01-20

4. Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability;Microelectronics Reliability;2016-08