Sequential‐ion‐implantation synthesis of ternary metal silicides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109909
Reference17 articles.
1. Silicide Formation By High Dose Transition Metal Implants Into Si.
2. Systematics of Silicide Formation by High Dose Miplantation of Transition Metals into Si
3. Mesotaxy: Single‐crystal growth of buried CoSi2layers
4. Synthesis of NiSi2 by 6 MeV Ni implantation into silicon
5. Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si
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1. Effect of annealing on carrier transport properties of GaN-incorporated silicon;RSC Advances;2016
2. Ternary CoxFe(1−x)Si2 and NixFe(1−x)Si2 formed by ion implantation in silicon;Journal of Applied Physics;2002-10
3. Evidence of a ternary Co1−xFexSi2 phase with a CaF2-type structure: High-resolution transmission electron microscopy and diffraction anomalous fine structure study;Applied Physics Letters;2002-09-23
4. XPS studies on silicon carbonitride films prepared by sequential implantation of nitrogen and carbon into silicon;Diamond and Related Materials;2002-09
5. Metastable phases of cobalt-ironsilicide formed by sequential implantation of Co and Fe in Si (111);Applied Physics Letters;2000-04-03
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