Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers-Reference-Cited by-同舟云学术

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Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers

Published:2000-10-16 Issue:16 Volume:77 Page:2557-2559
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheong M. G.,Kim K. S.,Oh C. S.,Namgung N. W.,Yang G. M.,Hong C.-H.,Lim K. Y.,Suh E.-K.,Nahm K. S.,Lee H. J.,Lim D. H.,Yoshikawa A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1318728

Reference16 articles.

1. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

2. Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates

3. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

4. Defect Donor and Acceptor in GaN

5. The role of dislocation scattering in n-type GaN films

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