Facets, indium distribution, and lattice distortion of InGaAs/GaAs quantum dots observed by three-dimensional scanning transmission electron microscope
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1572976
Reference25 articles.
1. Problems in recent analysis of injected carrier dynamics in semiconductor quantum dots
2. Pressure effects on nanoprobe photoluminescence of quasi-zero-dimensional confinement quantum dots
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4. Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice
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1. Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots;Journal of Applied Physics;2013-11-07
2. Improved estimation of embedded InGaAs/GaAs quantum dots locations using a domed-apex nanoprobe;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09
3. Compositional mapping of semiconductor quantum dots and rings;Physics Reports;2011-04
4. Mechanism of Photoluminescence Quenching of InGaAs/GaAs Quantum Dots Resulting from Nanoprobe Indentation;Journal of Nanoscience and Nanotechnology;2011-01-01
5. A Scan Through the History of STEM;Scanning Transmission Electron Microscopy;2010-12-16
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