Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1511821
Reference18 articles.
1. Direct electronic transport through an ensemble of InAs self-assembled quantum dots
2. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
3. Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
4. In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition
5. Relaxed template for fabricating regularly distributed quantum dot arrays
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1. Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method;Applied Physics Letters;2024-02-05
2. Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief Layer;Journal of Nanoscience and Nanotechnology;2014-04-01
3. Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns;Nanoscale Research Letters;2011-08-17
4. Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots;physica status solidi (a);2011-05-18
5. The effects of relaxed InGaAs virtual substrates on the formation of self-assembled InAs quantum dots;Semiconductor Science and Technology;2008-04-04
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